BD330 Datasheet, PDF (1/2 Pages) NXP Semiconductors – PNP power transistor

INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
BD330
DESCRIPTION
·DC Current Gain-
: h_FE= 85~375(Min)@ I_C= -0.5A
·Collector-Emitter Sustaining Voltage -
: V_CEO(SUS)= -20V(Min)
·Complement to type BD329
APPLICATIONS
·Especially for battery equipped applications.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO
Collector-Base Voltage
-32
V
V_CEO
Collector-Emitter Voltage
-20
V
V_EBO
Emitter-Base Voltage
-5
V
I_C
Collector Current-Continuous
-3
A
I_BM
Base Current-Peak
P_C
Collector Power Dissipation
@ T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
-1
A
15
W
150
℃
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c} Thermal Resistance,Junction to Case
7 ℃/W
R_{th j-a} Thermal Resistance,Junction to Ambient 100 ℃/W
isc Website：www.iscsemi.cn