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| BD313 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BD313
DESCRIPTION
·Excellent Safe Operating Area
·DC Current Gain-hFE= 25(Min.)@IC = 4A
·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.0 V(Max)@ IC = 5A
·Complement to Type BD314
APPLICATIONS
·Designed for high quality amplifiers operating up to 60 watts
into 4 ohm load.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
80
V
VCEO
Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
10
A
ICM
Collector Current-Peak
20
A
IBB
Base Current-Continuous
4
A
PC
Collector Power Dissipation@TC=25â 115
W
TJ
Junction Temperature
200
â
Tstg
Storage Temperature
-65~200 â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
1.52 â/W
isc Websiteï¼www.iscsemi.cn
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