BD311 Datasheet, PDF (1/3 Pages) Motorola, Inc – 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
BD311
DESCRIPTION
With TO-3 package
High DC current gain
Excellent safe operating area
Complement to type BD312
APPLICATIONS
Designed for power amplifier applications
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current
I_CM
Collector current(peak)
I_B
Base current
P_T
Total power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25
VALUE
60
60
5
10
20
4
115
-65~200
-65~200
UNIT
V
V
V
A
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c}
Thermal resistance from junction to case
MAX
1.52
UNIT
/W