BD301 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BD301
DESCRIPTION
·DC Current Gain -
: h_FE =30(Min.)@ I_C= 3A
·Collector-Emitter Breakdown Voltage-
: V_(BR)CEO= 45V(Min.)
·Complement to Type BD302
APPLICATIONS
·Designed for audio output stages up to 25W, vertical
deflection circuits in color TV receivers.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO
Collector-Base Voltage
60
V
V_CEO
Collector-Emitter Voltage
45
V
V_EBO
Emitter-Base Voltage
5
V
I_C
Collector Current-Continuous
8
A
I_CM
Collector Current-Peak
12
A
I_BB
Base Current-Continuous
P_C
Collector Power Dissipation
@ T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
2
A
55
W
150
℃
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c} Thermal Resistance, Junction to Case
MAX UNIT
2.3 ℃/W
isc Website：www.iscsemi.cn