BD277 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – 7-A 70-W EPITAXIAL BASE SILICON PNP VERSAWATT TRANSISTORS

INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
BD277
DESCRIPTION
·Wide Area of Safe Operation
·Low Saturation Voltage-
·High Power Dissipation
APPLICATIONS
·Designed for use in series regulators and shunt regulators.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
VCBO
Collector-Base Voltage
-45
VCEO Collector-Emitter Voltage
-45
VEBO
Emitter-Base Voltage
-4
IC
Collector Current-Continuous
-7
IB
Base Current
-3
PC
Collector Power Dissipation
@ TC=25℃
70
TJ
Junction Temperature
150
T_stg
Storage Temperature Range
-65~150
UNIT
V
V
V
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c}
R_{th j-a}
Thermal Resistance, Junction to Case
1.78 ℃/W
Thermal Resistance, Junction to Ambient 70 ℃/W
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