BD263 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Darlingtion Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
BD263
DESCRIPTION
·Collector–Emitter Breakdown Voltage—
: V(BR)CEO = 60V
·DC Current Gain—
: hFE = 750(Min) @ IC= 1.5 A
APPLICATIONS
·Designed for use as output devices in complementary
general-purpose amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
80
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
4
A
IB
Base Current
PC
Collector Power Dissipation
TC=25℃
Ti
Junction Temperature
Tstg
Storage Temperature Range
0.1
A
36
W
150
℃
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case 3.13 ℃/W
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