BD250B Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Power Transistor

INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
BD250/A/B/C
DESCRIPTION
·Collector Current -IC= -25A
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO = -45V(Min)- BD250; -60V(Min)- BD250A
-80V(Min)- BD250B; -100V(Min)- BD250C
·Complement to Type BD249/A/B/C
APPLICATIONS
·Designed for use in general purpose power amplifier and
switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BD250
-55
VCER
Collector-Emitter
Voltage (RBE= 100Ω)
BD250A
BD250B
-70
-90
V
BD250C
-115
BD250
-45
VCEO
Collector-Emitter
Voltage
BD250A
-60
V
BD250B
-80
BD250C -100
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-25
A
ICM
Collector Current-Peak
-40
A
IB
Base Current
Collector Power Dissipation
PC
@ Ta=25℃
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature Range
-5
A
3
W
125
150
℃
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
isc website：www.iscsemi.com
MAX UNIT
1.0 ℃/W
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