BD250 Datasheet, PDF (1/3 Pages) Power Innovations Ltd – PNP SILICON POWER TRANSISTORS

Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
BD250/A/B/C
DESCRIPTION
With TO-3PN package
Complement to type BD249/A/B/C
125 W at 25°C case temperature
25 A continuous collector current
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
BD246
V_CBO
Collector-base voltage
BD246A
BD246B
BD246C
BD246
V_CEO
BD246A
Collector-emitter voltage
BD246B
BD246C
V_EBO
I_C
Emitter-base voltage
Collector current
I_CM
Collector current-peak
I_B
Base current
P_C
Collector power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Collector emitter
Open base
Open collector
T_C=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c}
Thermal resistance junction to case
VALUE
-55
-70
-90
-115
-45
-60
-80
-100
-5
-25
-40
-5
125
-65~150
-65~150
UNIT
V
V
V
A
A
A
W
VALUE
1
UNIT
/W