BD249 Datasheet, PDF (1/3 Pages) Mospec Semiconductor – POWER TRANSISTORS(25A,125W)

Inchange Semiconductor
Silicon NPN Power Transistors
DESCRIPTION
With TO-3PN package
Complement to type BD250/A/B/C
125 W at 25°C case temperature
25 A continuous collector current
Product Specification
BD249/A/B/C
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
CONDITIONS
BD249
V_CEO
Collector-emitter voltage
BD249A
BD249B
Open base
BD249C
BD249
V_CBO
Collector-base voltage
BD249A
BD249B
Open base
BD249C
V_EBO
I_C
Emitter-base voltage
Collector current
Open collector
I_CM
Collector current-peak
I_B
Base current
P_C
Collector power dissipation
T_C=25
T_j
Junction temperature
T_stg
Storage temperature
VALUE
45
60
80
100
55
70
90
115
5
25
40
5
125
-65~150
-65~150
UNIT
V
V
V
A
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c}
Thermal resistance junction to case
VALUE
1.0
UNIT
/W