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| BD246 Datasheet, PDF (1/3 Pages) Power Innovations Ltd – PNP SILICON POWER TRANSISTORS | |||
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INCHANGE Semiconductor
isc Silicon PNP Power Transistor
DESCRIPTION
·Collector Current -IC= -10A
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO = -45V(Min)- BD246; -60V(Min)- BD246A
-80V(Min)- BD246B; -100V(Min)- BD246C
·Complement to Type BD245/A/B/C
APPLICATIONS
·Designed for use in general purpose power amplifier and
switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
BD246
-55
VCER
Collector-Emitter
Voltage (RBE= 100Ω)
BD246A
BD246B
-70
-90
V
BD246C -115
BD246
-45
VCEO
Collector-Emitter
Voltage
BD246A
-60
V
BD246B
-80
BD246C -100
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-10
A
ICM
Collector Current-Peak
-15
A
IBB
Base Current
Collector Power Dissipation
PC
@ Ta=25â
Collector Power Dissipation
@ TC=25â
TJ
Junction Temperature
Tstg
Storage Temperature Range
-3
A
3
W
80
150
â
-65~150 â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
isc Websiteï¼www.iscsemi.cn
MAX UNIT
1.56 â/W
isc Product Specification
BD246/A/B/C
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