BD245D Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BD245D
DESCRIPTION
·Excellent Safe Operating Area
·DC Current Gain-
: hFE>40@IC = 1A
·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1 V(Max)@ IC = 3A
·Designed for Complementary Use with the BD246D
APPLICATIONS
·Designed for general-purpose switching and amplifier
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
160
V
VCEO Collector-Emitter Voltage
120
V
VEBO
Emitter-base Voltage
5
V
IC
Collector Current-Continuous
10
A
IB
Base Current
7
A
PC
Collector Power Dissipation@TC=25℃
80
W
Tj
Junction Tmperature
Tstg
Storage Temperature Range
150
℃
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE UNIT
Rth j-c Thermal Resistance,Junction to Case
1.56 ℃/W
Rth j-a Thermal Resistance,Junction to Ambient
42 ℃/W
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