BD245 Datasheet, PDF (1/3 Pages) Power Innovations Ltd – NPN SILICON POWER TRANSISTORS

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
DESCRIPTION
·Collector Current -I_C= 10A
·Collector-Emitter Breakdown Voltage-
: V_(BR)CEO = 45V(Min)- BD245; 60V(Min)- BD245A
80V(Min)- BD245B; 100V(Min)- BD245C
·Complement to Type BD246/A/B/C
APPLICATIONS
·Designed for use in general purpose power amplifier and
switching applications
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BD245
55
V_CER
Collector-Emitter
Voltage (R_BE= 100Ω)
BD245A
BD245B
70
90
V
BD245C
115
BD245
45
V_CEO
Collector-Emitter
Voltage
BD245A
60
V
BD245B
80
BD245C
100
V_EBO
Emitter-Base Voltage
5
V
I_C
Collector Current-Continuous
10
A
I_CM
Collector Current-Peak
15
A
I_BB
Base Current
Collector Power Dissipation
P_C
@ T_a=25℃
Collector Power Dissipation
@ T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
3
A
3
W
80
150
℃
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c} Thermal Resistance, Junction to Case
isc Website：www.iscsemi.cn
MAX UNIT
1.56 ℃/W
isc Product Specification
BD245/A/B/C