BD243B Datasheet, PDF (1/2 Pages) Motorola, Inc – Complementary Silicon Plastic Power Transistors

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BD243/A/B/C
DESCRIPTION
·DC Current Gain -hFE =30(Min)@ IC= 0.3A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 45V(Min)- BD243; 60V(Min)- BD243A
80V(Min)- BD243B; 100V(Min)- BD243C
·Complement to Type BD244/A/B/C
APPLICATIONS
·Designed for use in general purpose power amplifier and
switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BD243
55
BD243A
70
VCBO
Collector-Base Voltage
V
BD243B
90
BD243C
110
BD243
45
BD243A
60
VCEO
Collector-Emitter Voltage
V
BD243B
80
BD243C
100
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
6
A
ICM
Collector Current-Peak
10
A
IB
Base Current
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
3
A
65
W
150
℃
Tstg
Storage Temperature Range
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
1.92 ℃/W
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