BD242B Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Power Transistor

INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
BD242/A/B/C
DESCRIPTION
·DC Current Gain -hFE = 25(Min)@ IC= -1.0A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -45V(Min)- BD242; -60V(Min)- BD242A
-80V(Min)- BD242B; -100V(Min)- BD242C
·Complement to Type BD241/A/B/C
APPLICATIONS
·Designed for use in general purpose power amplifier and
switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BD242
-55
BD242A
-70
VCBO
Collector-Base Voltage
V
BD242B
-90
BD242C
-115
BD242
-45
BD242A
-60
VCEO
Collector-Emitter Voltage
V
BD242B
-80
BD242C -100
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-3.0
A
ICM
Collector Current-Peak
-5.0
A
IB
Base Current
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
-1.0
A
40
W
150
℃
Tstg
Storage Temperature Range
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
3.125 ℃/W
isc website：www.iscsemi.com
1 _{isc & iscsemi is registered trademark}