BD241 Datasheet, PDF (1/3 Pages) Mospec Semiconductor – POWER TRANSISTORS(3A,40W)

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
BD241/A/B/C
DESCRIPTION
With TO-220C package
Complement to type BD242/A/B/C
APPLICATIONS
For medium power linear and
switching applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
BD241
V_CBO
Collector-base voltage
BD241A
BD241B
Open emitter
BD241C
BD241
V_CEO
Collector-emitter voltage
BD241A
BD241B
Open base
BD241C
V_EBO
Emitter-base voltage
Open collector
I_C
Collector current
I_CM
Collector current-peak
I_B
Base current
P_C
Collector power dissipation
T_C=25
T_j
Junction temperature
T_stg
Storage temperature
VALUE
55
70
90
115
45
60
80
100
5
3
5
1
40
150
-65~150
UNIT
V
V
V
A
A
A
W