BD240B Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Power Transistor

INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
BD240/A/B/C
DESCRIPTION
·DC Current Gain -hFE = 40(Min)@ IC= -0.2A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -45V(Min)- BD240; -60V(Min)- BD240A
-80V(Min)- BD240B; -100V(Min)- BD240C
·Complement to Type BD239/A/B/C
APPLICATIONS
·Designed for medium power linear and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BD240
-55
BD240A
-70
VCER
Collector-Emitter Voltage
V
BD240B
-90
BD240C
-115
BD240
-45
BD240A
-60
VCEO
Collector-Emitter Voltage
V
BD240B
-80
BD240C
-100
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-2
A
ICM
Collector Current-Peak
-4
A
IB
Base Current
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature Range
-0.6
A
30
W
150
℃
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
4.17 ℃/W
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