BD237 Datasheet, PDF (1/2 Pages) Motorola, Inc – Plastic Medium Power Silicon NPN Transistor

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
BD237
DESCRIPTION
·DC Current Gain-
: hFE= 40(Min)@ IC= 0.15A
·Collector-Emitter Sustaining Voltage -
: VCEO(SUS)= 80V(Min)
·Complement to Type BD238
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use in 5~10 watt audio amplifiers and drivers
utilizing complementary or quasi complementary circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
VCEO
VEBO
IC
IB
PC
TJ
Tstg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Base Current-Continuous
Collector Power Dissipation
@ TC=25℃
Junction Temperature
Storage Temperature Range
100
V
80
V
5
V
2.0
A
1.0
A
25
W
150
℃
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
5.0 ℃/W
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