BD232 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BD232
DESCRIPTION
·Good Linearity of h_FE
·High Collector-Emitter Breakdown Voltage-
: V_(BR)CEO= 300V(Min)
APPLICATIONS
·Designed for use in power output stages and line driver
in TV receivers.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCES Collector-Emitter Voltage
500
V
VCEO Collector-Emitter Voltage
300
V
VEBO Emitter-Base Voltage
5.0
V
IC
Collector Current-Continuous
0.5
A
IB
Base Current-Continuous
PC
Collector Power Dissipation
@TC=25℃
TJ
Junction Temperature
T_stg
Storage Temperature Range
0.25
A
20
W
150
℃
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c} Thermal Resistance, Junction to Case 6.25 ℃/W
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