BD230 Datasheet, PDF (1/3 Pages) NXP Semiconductors – NPN power transistor

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
BD230
DESCRIPTION
With TO-126 package
Complement to type BD231
High current (Max:1.5A)
Low voltage (Max: 80V)
APPLICATIONS
Drive stage in TV circuits
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
V_CBO
Collector-base voltage
Open emitter
V_CEO
Collector-emitter voltage
Open base
V_EBO
Emitter-base voltage
Open collector
I_C
Collector current (DC)
I_CM
Collector current-Peak
I_BM
Base current-Peak
P_D
Total power dissipation
T_mb62
T_C=25
T_j
Junction temperature
T_stg
Storage temperature
T_amb
Operating ambient temperature
VALUE
100
80
5
1.5
3
1
12.5
10
150
-65~150
-65~150
UNIT
V
V
V
A
A
A
W