BD227 Datasheet, PDF (1/2 Pages) NXP Semiconductors – PNP power transistors

INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
BD227/229/231
DESCRIPTION
·DC Current Gain-
: h_FE= 40(Min)@ I_C= -0.15A
·Complement to Type BD226/228/230
APPLICATIONS
·Designed for use in driver stages in television circuits.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
BD227
-45
V_CBO
Collector-Base Voltage BD229
-60
BD231
-100
BD227
-45
V_CEO
Collector-Emitter Voltage BD229
-60
BD231
-80
V_CER
Collector-Emitter
Voltage(R_BE= 1kΩ)
BD227
BD229
BD231
-45
-60
-100
V_EBO
Emitter-Base Voltage
-5
I_C
Collector Current-Continuous
-1.5
I_CM
Collector Current-Peak
Collector Power Dissipation
P_C
@ T_C≤62℃
T_J
Junction Temperature
-3.0
12.5
150
T_stg
Storage Temperature Range
-65~150
UNIT
V
V
V
V
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c}
R_{th j-a}
Thermal Resistance,Junction to Case
7 ℃/W
Thermal Resistance,Junction to Ambient 100 ℃/W
isc Website：www.iscsemi.cn