BD202F Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Power Transistor

INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
BD202F/204F
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V_(BR)CEO = -45V(Min)- BD202F
-60V(Min)- BD204F
·Complement to Type BD201F/203F
APPLICATIONS
·Designed for use in hi-fi equipment delivering an output
of 15 to 15 W into a 4Ωor 8Ωload.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BD202F
-60
VCBO
Collector-Base Voltage
V
BD204F
-60
BD202F
-45
VCEO Collector-Emitter Voltage
V
BD204F
-60
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-8
A
ICM
Collector Current-Peak
-12
A
IB
Base Current
Collector Power Dissipation
PC
@ TC=25℃
TJ
Junction Temperature
T_stg
Storage Temperature Range
-3
A
60
W
150
℃
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c} Thermal Resistance, Junction to Case
MAX UNIT
6.3 ℃/W
isc Website：www.iscsemi.cn