BD201F Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BD201F/203F
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V_(BR)CEO = 45V(Min)- BD201F
60V(Min)- BD203F
·Complement to Type BD202F/204F
APPLICATIONS
·Designed for use in hi-fi equipment delivering an output
of 15 to 15 W into a 4Ωor 8Ωload.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BD201F
60
V_CBO
Collector-Base Voltage
V
BD203F
60
BD201F
45
V_CEO
Collector-Emitter Voltage
V
BD203F
60
V_EBO
Emitter-Base Voltage
5
V
I_C
Collector Current-Continuous
8
A
I_CM
Collector Current-Peak
12
A
I_BB
Base Current
Collector Power Dissipation
P_C
@ T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
3
A
32
W
150
℃
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c} Thermal Resistance, Junction to Case
MAX UNIT
6.3 ℃/W
isc Website：www.iscsemi.cn