BD201 Datasheet, PDF (1/2 Pages) General Semiconductor – EPITAXIAL BASE SILICON NPN AND PNP VERSAWATT TRANSISTORS

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V_(BR)CEO = 45V(Min)- BD201
60V(Min)- BD203
·Complement to Type BD202/204
APPLICATIONS
·Designed for use in hi-fi equipment delivering an output
of 15 to 15 W into a 4Ωor 8Ωload.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BD201
60
V_CBO
Collector-Base Voltage
V
BD203
60
BD201
45
V_CEO
Collector-Emitter Voltage
V
BD203
60
V_EBO
Emitter-Base Voltage
5
V
I_C
Collector Current-Continuous
8
A
I_CM
Collector Current-Peak t_p≤10ms
12
A
I_CSM
Collector Current-Peak t_p≤2ms
25
A
I_BB
Base Current
Collector Power Dissipation
P_C
@ T_C=25℃
T_J
Junction Temperature
3
A
60
W
150
℃
T_stg
Storage Temperature Range
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c}
R_{th j-a}
Thermal Resistance, Junction to Case
2.08 ℃/W
Thermal Resistance, Junction to Ambient 70 ℃/W
isc Product Specification
BD201/203
isc Website：www.iscsemi.cn