BD177 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BD177
DESCRIPTION
·DC Current Gain-
: hFE= 40-250(Min)@ IC= 0.15A
·Collector-Emitter Sustaining Voltage -
: VCEO(SUS)= 60V(Min)
·Complement to type BD178
APPLICATIONS
·Designed for medium power linear and switching
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
3
A
ICM
Collector Current-Pulse
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
7
A
30
W
150
℃
Tstg
Storage Temperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
8.5 ℃/W
Rth j-a Thermal Resistance,Junction to Ambient 70 ℃/W
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