BD157 Datasheet, PDF (1/2 Pages) Motorola, Inc – Plastic Medium Power NPN Silicon Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BD157
DESCRIPTION
·Collector–Emitter Sustaining Voltage-
: V_CEO(SUS) = 250V(Min)
·DC Current Gain-
: h_FE = 30~240(Min) @ I_C= 50mA
APPLICATIONS
·Designed for power output stages for television, radio,
phonograph and other consumer product applications.
www.iscsemi.cn ^{ABSOLUTE MAXIMUM RATINGS(Ta=25℃)}
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO
Collector-Base Voltage
275
V
V_CEO
Collector-Emitter Voltage
250
V
V_EBO
Emitter-Base Voltage
5
V
I_C
Collector Current-Continuous
0.5
A
I_CM
Collector Current-Peak
1.0
A
I_BB
Base Current-Continuous
Collector Power Dissipation
P_C
T_C=25℃
T_i
Junction Temperature
T_stg
Storage Temperature Range
0.25
A
20
W
150
℃
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c} Thermal Resistance,Junction to Case
MAX UNIT
6.25 ℃/W
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