BD135_17 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
BD135
DESCRIPTION
·DC Current Gain-
: hFE= 40(Min)@ IC= 0.15A
·Collector-Emitter Sustaining Voltage -
: VCEO(SUS)= 45V(Min)
·Complement to type BD136
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use as audio amplifiers and drivers utilizing
complementary or quasi complementary circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VCBO
Collector-Base Voltage
45
VCEO
Collector-Emitter Voltage
45
VEBO
Emitter-Base Voltage
5
IC
Collector Current-Continuous
IB
Base Current-Continuous
Collector Power Dissipation
@ Ta=25℃
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature Range
1.5
0.5
1.25
12.5
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
10 ℃/W
Rth j-a Thermal Resistance,Junction to Ambient 100 ℃/W
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