BD135 Datasheet, PDF (1/3 Pages) Motorola, Inc – Plastic Medium Power Silicon NPN Transistor

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
BD135 BD137 BD139
DESCRIPTION
With TO-126 package
High current
Complement to type BD136/138/140
APPLICATIONS
Driver stages in high-fidelity amplifiers
and television circuits
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
BD135
V_CBO
Collector-base voltage BD137
BD139
BD135
V_CEO
Collector-emitter voltage BD137
BD139
V_EBO
Emitter -base voltage
I_C
Collector current (DC)
I_CM
Collector current-Peak
I_BM
Base current-Peak
P_t
Total power dissipation
T_j
Junction temperature
T_stg
Storage temperature
T_amb
Operating ambient temperature
CONDITIONS
Open emitter
Open base
Open collector
T_mb70
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-a}
Thermal resistance from junction to ambient
R_{th j-mb}
Thermal resistance from junction to mounting base
VALUE
45
60
100
45
60
100
5
1.5
2
1
8
150
-65~150
-65~150
UNIT
V
V
V
A
A
A
W
VALUE
100
10
UNIT
K/W
K/W