BD132 Datasheet, PDF (1/3 Pages) NXP Semiconductors – PNP power transistor

Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
BD132
DESCRIPTION
Complement to type BD131
With TO-126 package
High current (Max:- 3A)
Low voltage (Max: -45V)
APPLICATIONS
For general purpose power applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter -base voltage
I_C
Collector current (DC)
I_CM
Collector current-Peak
I_BM
Base current-Peak
P_t
Total power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_mb60
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-a}
Thermal resistance from junction to ambient
R_{th j-mb}
Thermal resistance from junction to mounting base
VALUE
-45
-45
-4
-3
-6
-0.5
15
150
-65~150
UNIT
V
V
V
A
A
A
W
VALUE
100
6
UNIT
K/W
K/W