BD131_17 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
BD131
DESCRIPTION
·DC Current Gain-
: hFE= 40(Min)@ IC= 0.5A
·Collector-Emitter Breakdown Voltage -
: V(BR)CEO= 45V(Min.)
·Complement to type BD132
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for medium power and general purpose
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
VCEO
VEBO
IC
ICM
IBM
PC
TJ
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Peak
Collector Power Dissipation
@ TC=25℃
Junction Temperature
70
V
45
V
6
V
3
A
6
A
0.5
A
15
W
150
℃
Tstg
Storage Temperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
6
℃/W
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