BD116 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
BD116
DESCRIPTION
·Excellent Safe Operating Area
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min)
·Collector-Emitter Saturation Voltage-
: VCE(sat)= 0.6V(Max)@ IC = 2A
·Good Linearity of hFE
·Minimum Lot-to-Lot variations for robust device performance
and reliable operation.
APPLICATIONS
·Designed for RF power and general-purpose audio amplifier
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
80
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
3
A
ICM
Collector Current-Peak
5
A
IB
Base Current-Continuous
1
A
PC
Collector Power Dissipation@TC=75℃
15
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-65~150 ℃
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