BD107 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BD107
DESCRIPTION
·Continuous Collector Current -IC= 2.5A
·Power Dissipation-PD=12W @TC= 25℃
·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS
·Designed for driver and output stages and high
power switching.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
65
V
VCEO
Collector-Emitter Voltage
65
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
2.5
A
PC
Collector Power Dissipation@TC=25℃
12
W
TJ
Junction Temperature
-55~175 ℃
Tstg
Storage Temperature
-55~175 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
13
℃/W
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