AD161 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
AD161
DESCRIPTION
·Wide Area of Safe Operation
·DC Current Gain-
: hFE=50-350@IC= 0.5A
·Collector-Emitter Saturation Voltage-
: VCE(sat)= 0.7V(Max)@ IC= 3A
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for general-purpose power switch and amplifier,
consumer and industrial applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
32
V
VCEO
Collector-Emitter Voltage
20
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation
@TC=25℃
TJ
Junction Temperature
3
A
4
W
90
℃
Tstg
Storage Temperature
-55~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX
1.52
UNIT
℃/W
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