90N06 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – Drain Current –ID= 90A@ TC=25C

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
90N06
FEATURES
·Drain Current –I_D= 90A@ T_C=25℃
·Drain Source Voltage-
: V_DSS= 60V(Min)
·Static Drain-Source On-Resistance
: R_DS(on) = 0.003Ω(Max)
APPLICATIONS
• White LED boost converters
• Automotive Systems
• Industrial DC/DC Conversion Circuits
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
VGS
Drain-Source Voltage
Gate-Source Voltage-Continuous
60
V
±20
V
ID
Drain Current-Continuous
90
A
IDM
Drain Current-Single Pluse
360
A
PD
Total Dissipation
125
W
T_J
Max. Operating Junction Temperature
175
℃
T_stg
Storage Temperature
-55~175 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c}
R_{th j-a}
Thermal Resistance, Junction to Case
1 ℃/W
Thermal Resistance, Junction to Ambient 62.5 ℃/W
isc website： www.iscsemi.com
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