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| 8N80 Datasheet, PDF (1/2 Pages) Unisonic Technologies – 800V N-CHANNEL MOSFET | |||
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INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
8N80
·FEATURES
·Drain Current âID= 8A@ TC=25â
·Drain Source Voltage-
: VDSS=800V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 1.55Ω(Max)
·Avalanche Energy Specified
·Fast Switching
·Simple Drive Requirements
·DESCRITION
·Designed for high efficiency switch mode power supply.
·ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
VGS
Drain-Source Voltage
Gate-Source Voltage-Continuous
800
V
±30
V
ID
Drain Current-Continuous
8
A
IDM
Drain Current-Single Plused
32
A
PD
Total Dissipation @TC=25â
178
W
Tj
Max. Operating Junction Temperature
150
â
Tstg
Storage Temperature
-55~150 â
isc websiteï¼www.iscsemi.cn
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