8N65 Datasheet, PDF (1/2 Pages) Unisonic Technologies – 8A, 650V N-CHANNEL POWER MOSFET

INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
·FEATURES
·Drain Current –I_D= 8A@ T_C=25℃
·Drain Source Voltage-
: V_DSS= 650V(Min)
·Static Drain-Source On-Resistance
: R_DS(on) = 1.4Ω(Max)
·Avalanche Energy Specified
·Fast Switching
·Simple Drive Requirements
·DESCRITION
·Designed for high efficiency switch mode power supply
·PWM motor controls
·High efficient DC to DC converters
isc Product Specification
8N65
·ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
VGS
Drain-Source Voltage
Gate-Source Voltage-Continuous
650
V
±30
V
ID
Drain Current-Continuous
8
A
IDM
Drain Current-Single Plused
30
A
PD
Total Dissipation @TC=25℃
147
W
T_j
Max. Operating Junction Temperature
150
℃
T_stg
Storage Temperature
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c}
R_{th j-a}
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
0.85 ℃/W
62.5 ℃/W
isc website： www.iscsemi.com
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