8N60 Datasheet, PDF (1/2 Pages) Unisonic Technologies – 7.5 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
8N60
·FEATURES
·Drain Current –I_D= 7.5A@ T_C=25℃
·Drain Source Voltage-
: V_DSS= 600V(Min)
·Static Drain-Source On-Resistance
: R_DS(on) = 1.2Ω(Max)
·Avalanche Energy Specified
·Fast Switching
·Simple Drive Requirements
·DESCRITION
·Designed for high efficiency switch mode power supply.
·ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
VGS
Drain-Source Voltage
Gate-Source Voltage-Continuous
600
V
±20
V
ID
Drain Current-Continuous
7.5
A
IDM
Drain Current-Single Plused
30
A
PD
Total Dissipation @TC=25℃
147
W
T_j
Max. Operating Junction Temperature
150
℃
T_stg
Storage Temperature
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c}
R_{th j-a}
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
0.85 ℃/W
62.5 ℃/W
isc Website：www.iscsemi.cn