|
8N40 Datasheet, PDF (1/2 Pages) Unisonic Technologies – 8A, 400V N-CHANNEL POWER MOSFET | |||
|
isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
8N40
·DESCRIPTION
·Drain Current ID= 8A@ TC=25â
·Drain Source Voltage-
: VDSS= 450V(Min)
·Fast Switching Speed
·APPLICATIONS
·The ISC 8N40 is universally applied in electronic lamp ballast
based on half bridge topology and high efficient switched
mode power supply
·ABSOLUTE MAXIMUM RATINGS(TC=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage (VGS=0)
400
V
VGS
Gate-Source Voltage
±30
V
ID
Drain Current-continuous@ TC=25â
8
A
ID(puls)
Pulse Drain Current
32
A
Ptot
Total Dissipation@TC=25â
104
W
Tj
Max. Operating Junction Temperature
150
â
Tstg
Storage Temperature Range
-55~150 â
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
0.832 â/W
isc websiteï¼www.iscsemi.cn
1 isc & iscsemi is registered trademark
|
▷ |