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| 80N06 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – Fast Switching Speed | |||
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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
80N06
·DESCRIPTION
·Drain Current ID= 80A@ TC=25â
·Drain Source Voltage-
: VDSS= 60V(Min)
·Fast Switching Speed
·APPLICATIONS
·General purpose power amplifier
·ABSOLUTE MAXIMUM RATINGS(TC=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage (VGS=0)
60
V
VGS
Gate-Source Voltage
±30
V
ID
Drain Current-continuous@ TC=25â
80
A
ID(puls)
Pulse Drain Current
320
A
Ptot
Total Dissipation@TC=25â
150
W
Tj
Max. Operating Junction Temperature
150
â
Tstg
Storage Temperature Range
-55~150 â
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
1.0 â/W
isc websiteï¼www.iscsemi.cn
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