7N80 Datasheet, PDF (1/2 Pages) Unisonic Technologies – 7.0 Amps, 800 Volts N-CHANNEL POWER MOSFET

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
7N80
·FEATURES
·Drain Current I_D= 7A@ T_C=25℃
·Drain Source Voltage
: V_DSS= 800V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 1.9Ω(Max) @VGS = 10 V
·Avalanche Energy Specified
·Fast Switching
·APPLICATIONS
· High efficiency switch mode power supply
·ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
VGS
ID
IDM
PD
T_j
T_stg
Drain-Source Voltage
800
V
Gate-Source Voltage-Continuous
±30
V
Drain Current-Continuous
7
A
Drain Current-Single Plused
26.4
A
Total Dissipation @TC=25℃
142
W
Max. Operating Junction Temperature
150
℃
Storage Temperature
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c}
R_{th j-a}
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
0.88 ℃/W
62.5 ℃/W
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