75NF75 Datasheet, PDF (1/2 Pages) Estek Electronics Co. Ltd – HEXFET® POWER MOSFET

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
75NF75
FEATURES
·Drain Current –I_D= 80A@ T_C=25℃
·Drain Source Voltage-
: V_DSS= 75V(Min)
·Static Drain-Source On-Resistance
: R_DS(on) = 0.015Ω(Max)
DESCRIPTION
Suitable as primary switch in advanced high-efficiency, high-
frequency isolated DC-DC converters for Telecom and Computer
applications. It is also intended for any application with low gate
drive requirements .
APPLICATIONS
·Solenoid and relay drivers
·DC motor control
·DC-DC converters DC
·Automotive environment
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
V_DSS
Drain-Source Voltage
V_GS
Gate-Source Voltage-Continuous
I_D
Drain Current-Continuous
I_DM
Drain Current-Single Pluse (t_p≤10μs)
P_D
Total Dissipation @T_C=25℃
T_J
Max. Operating Junction Temperature
T_stg
Storage Temperature
VALUE
75
±20
80
320
300
150
-55~150
UNIT
V
V
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c}
R_{th j-a}
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
MAX
0.5
62.5
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UNIT
℃/W
℃/W