6N80 Datasheet, PDF (1/2 Pages) IXYS Corporation – N-Channel Enhancement Mode

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
6N80
·FEATURES
·Drain Current I_D= 6A@ T_C=25℃
·Drain Source Voltage
: V_DSS= 800V(Min)
·Static Drain-Source On-Resistance
: R_DS(on) = 2Ω(Max)
·Avalanche Energy Specified
·Fast Switching
·Simple Drive Requirements
·DESCRITION
·Switch mode power supply.
·ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_DSS
V_GS
I_D
I_DM
P_D
T_j
T_stg
Drain-Source Voltage
800
V
Gate-Source Voltage-Continuous
±20
V
Drain Current-Continuous
6
A
Drain Current-Single Plused
24
A
Total Dissipation @T_C=25℃
150
W
Max. Operating Junction Temperature
150
℃
Storage Temperature
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c}
R_{th j-a}
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
0.83 ℃/W
40 ℃/W
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