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6N70 Datasheet, PDF (1/2 Pages) Unisonic Technologies – 6.0A, 700V N-CHANNEL POWER MOSFET
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
6N70
·FEATURES
·Drain Current ID= 6A@ TC=25℃
·Drain Source Voltage-
: VDSS= 700V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 1.9Ω(Max)
·Avalanche Energy Specified
·Fast Switching
·Simple Drive Requirements
·DESCRITION
·Switch mode power supply.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
VGS
ID
IDM
PD
Tj
Tstg
Drain-Source Voltage
700
V
Gate-Source Voltage-Continuous
±20
V
Drain Current-Continuous
6
A
Drain Current-Single Plused
24
A
Total Dissipation @TC=25℃
150
W
Max. Operating Junction Temperature
150
℃
Storage Temperature
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
0.83 ℃/W
40 ℃/W
isc website:www.iscsemi.cn
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