6N65 Datasheet, PDF (1/2 Pages) Unisonic Technologies – 6.2A, 650V N-CHANNEL POWER MOSFET

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
6N65
·FEATURES
·Drain Current I_D= 6.2A@ T_C=25℃
·Drain Source Voltage
: V_DSS= 650V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 1.7Ω(Max) @VGS = 10 V
·Avalanche Energy Specified
·Fast Switching
·APPLICATIONS
·Designed for high speed switching applications of switching
power supplies and adaptors
·ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
VGS
Drain-Source Voltage
Gate-Source Voltage-Continuous
650
V
±30
V
ID
Drain Current-Continuous
6.2
A
IDM
Drain Current-Single Plused
24.8
A
PD
Total Dissipation @TC=25℃
125
W
T_j
Max. Operating Junction Temperature
150
℃
T_stg
Storage Temperature
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c}
R_{th j-a}
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
1.0 ℃/W
62.5 ℃/W
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