65N06 Datasheet, PDF (1/2 Pages) Nell Semiconductor Co., Ltd – N-Channel Power MOSFET

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
65N06
FEATURES
·Drain Current –I_D=63A@ T_C=25℃
·Drain Source Voltage-
: V_DSS= 60V(Min)
·Static Drain-Source On-Resistance
: R_DS(on) = 0.018Ω(Max)
DESCRIPTION
·Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls, these
devices are particularly well suited for bridge circuits where
diode speed and commutating safe operating areas are critical
and offer additional safety margin against unexpected voltage
transients.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
VGS
Drain-Source Voltage
Gate-Source Voltage-Continuous
60
V
±20
V
ID
Drain Current-Continuous
63
A
IDM
Drain Current-Single Plused
240
A
PD
Total Dissipation @TC=25℃
150
W
T_J
Max. Operating Junction Temperature
175
℃
T_stg
Storage Temperature
-55~175 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c}
R_{th j-a}
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
MAX
1.05
62.5
UNIT
℃/W
℃/W
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