60N10_17 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc N-Channel Mosfet Transistor

isc N-Channel Mosfet Transistor
INCHANGE Semiconductor
60N10
·FEATURES
·Drain Current ID= 60A@ TC=25℃
·Drain Source Voltage-
: VDSS= 100V(Min)
·Fast Switching Speed
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Switching mode power supplies
·General purpose power amplifier
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
ARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage (VGS=0)
100
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-continuous@ TC=25℃
60
A
ID(puls)
Pulse Drain Current
180
A
Ptot
Total Dissipation@TC=25℃
150
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case
0.83 ℃/W
Rth j-a Thermal Resistance, Junction to Ambient
40
℃/W
isc website：www.iscsemi.com
1 _{isc & iscsemi is registered trademark}