60N06-220 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – N-Channel MOSFET Transistor

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
60N06
·DESCRIPTION
·Drain Current ID= 60A@ TC=25℃
·Static Drain-Source On-Resistance
: RDS(on) = 18mΩ(Max)
·Fast Switching Speed
·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
·APPLICATIONS
·General purpose power amplifier
High current,high speed switching
Solenoid and relay drivers
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
ARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
60
V
VGS
Gate-Source Voltage
±20
V
Drain Current-continuous@ TC=25℃
60
ID
A
Drain Current-continuous@ TC=100℃
39
ID(puls)
Pulse Drain Current
120
A
Ptot
Total Dissipation@TC=25℃
120
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case
1.25 ℃/W
Rth j-a Thermal Resistance, Junction to Ambient 62.5 ℃/W
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