60N06-14 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc N-Channel MOSFET Transistor

isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
60N06-14
·DESCRIPTION
·High current capability
·Avalanche rugged technology
·Low gate charge
·Fast Switching Speed
·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
·APPLICATIONS
·Regulator
·High current,high speed switching
·Solenoid and relay drivers
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
ARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
60
V
VGS
Gate-Source Voltage
±20
V
Drain Current-continuous@ TC=25℃
60
ID
A
Drain Current-continuous@ TC=100℃
50
ID(puls)
Pulse Drain Current
240
A
Ptot
Total Dissipation@TC=25℃
150
W
Tj
Max. Operating Junction Temperature
175
℃
Tstg
Storage Temperature Range
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
-55~175 ℃
MAX
1.0
UNIT
℃/W
Rth j-a Thermal Resistance, Junction to Ambient 62.5 ℃/W
isc website：www.iscsemi.com
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