5N65-220 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc N-Channel MOSFET Transistor

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
5N65
·FEATURES
·Drain Current ID= 5A@ TC=25℃
·Drain Source Voltage
: VDSS= 650V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 2.4Ω(Max) @VGS = 10 V
·Avalanche Energy Specified
·Fast Switching
·Simple Drive Requirements
·APPLICATIONS
·Designed for high efficiency switch mode power supply.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
650
V
VGS
Gate-Source Voltage-Continuous
±20
V
ID
Drain Current-Continuous
5
A
IDM
Drain Current-Single Plused
20
A
PD
Total Dissipation @TC=25℃
100
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case
1.2 ℃/W
Rth j-a Thermal Resistance, Junction to Ambient 62.5 ℃/W
isc website：www.iscsemi.com
1 _{isc & iscsemi is registered trademark}