5N50-220 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc N-Channel MOSFET Transistor

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
5N50
·DESCRIPTION
·Drain Current ID= 5A@ TC=25℃
·Drain Source Voltage-
: VDSS= 500V(Min)
·Fast Switching Speed
·APPLICATIONS
·General purpose power amplifier
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
ARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
500
V
VGS
Gate-Source Voltage
±30
V
ID
Drain Current-continuous@ TC=25℃
5
A
ID(puls)
Pulse Drain Current
18
A
Ptot
Total Dissipation@TC=25℃
100
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case
1.67 ℃/W
Rth j-a Thermal Resistance, Junction to Ambient 62.5 ℃/W
isc website：www.iscsemi.com
1 _{isc & iscsemi is registered trademark}