 English |
|
|
|
|
|
|
|
| 50N20 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – Fast Switching Speed | |||
| |||
|
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
50N20
·DESCRIPTION
·Drain Current ID= 50A@ TC=25â
·Drain Source Voltage-
: VDSS= 200V(Min)
·Fast Switching Speed
·APPLICATIONS
·General purpose power amplifier
ABSOLUTE MAXIMUM RATINGS(TC=25â)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
200
V
VGS
Gate-Source Voltage
±30
V
ID
Drain Current-continuous@ TC=25â
50
A
ID(puls)
Pulse Drain Current
200
A
Ptot
Total Dissipation@TC=25â
250
W
Tj
Max. Operating Junction Temperature
150
â
Tstg
Storage Temperature Range
-55~150 â
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
0.5 â/W
isc websiteï¼www.iscsemi.cn
1 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese